SKW30N60HS – IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 250W
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V
Напряжение насыщения коллектор-эмиттер (Ucesat): 3.5V
Максимальный постоянный ток коллектора (Ic): 41A
SKW30N60HS Datasheet (PDF)
SKW30N60HS High Speed IGBT in NPT-technology C � 30% lower Eoff compared to previous generation � Short circuit withstand time � 10 �s G E � Designed for operation above 30 kHz � NPT-Technology for 600V applications offers: PG-TO-247-3 – parallel switching capability – moderate Eoff increase with temperature – very tight parameter distribution � High ruggedness, temperature
SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: P-TO-247-3-1 – parallel switching capability (TO-247AC) – moderate Eoff increase with temperature – very tight parameter distribution
SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G � Designed for: E – Motor controls – Inverter � NPT-Technology for 600V applications offers: – very tight parameter distribution – high ruggedness, temperature sta
SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s G Designed for: E – Motor controls – Inverter NPT-Technology for 600V applications offers: – very tight parameter distribution – high ruggedn
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