Даташит поиск по электронным компонентам в формате pdf на русском языке. Бесплатная база содержит более 1 000 000 файлов доступных для скачивания. Воспользуйтесь приведенной ниже формой или ссылками для быстрого поиска (datasheet) по алфавиту.Если вы не нашли нужного Вам элемента, обратитесь к администрации проекта .
2SK3918 MOSFET – описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3918
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 29 W
Предельно допустимое напряжение сток-исток (Uds): 25 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Максимально допустимый постоянный ток стока (Id): 48 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
Тип корпуса: TO251_MP3
2SK3918 Datasheet (PDF)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co
4.1. 2sk3911.pdf Size:193K _toshiba
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.22? (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: >4.2. 2sk3914-01.pdf Size:205K _fuji
2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless
2SK3913-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles
2SK3917-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles
2SK3916-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless
2SK3915-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unles
4.7. 2sk3919.pdf Size:97K _tysemi
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3919 TO-252 Unit: mm +0.1 6.50+0.15 2.30-0.1 -0.15 +0.8 5.30+0.2 0.50-0.7 -0.2 Features Low on-state resistance RDS(on)1 =5.6 m MAX. (VGS =10 V, >
Semiconductor Pinout Informations
K3918 Datasheet PDF – 25V, 48A, N-Ch, Power MOSFET – Renesas
Part Number : K3918
Function : 48A, 25V, Switching N-Channel Power MOSFET
Package : TO-251, TO-252 Type
The 2SK3918, K3918 is N-channel MOS FET device thatfeatures a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : > 4. Drain Current (pulse) : > 5. Total Power Dissipation (TC = 25°C) : PT1 = 29 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = 55 to +150 °C
9. Single Avalanche Current : IAS = 22 A
10. Single Avalanche Energy : EAS = 48 mJ
1. Low on-state resistance : RDS(on)1 = 7.5 mΩ MAX. (VGS= 10 V, > 2. Low Ciss : Ciss= 1300 pF TYP.
3. 5 V drive available
Other data sheets within the file : 2SK3918, 2SK3918-ZK, K3918-ZK